Photoluminescence from localized states in disordered indium nitride
نویسندگان
چکیده
Bhavtosh Bansal, 2, ∗ Abdul Kadir, Arnab Bhattacharya, and V. V. Moshchalkov IMM, High Field Magnet Laboratory HFML, University of Nijmegen, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands INPAC-Institute for Nanoscale Physics and Chemistry, Pulsed Fields Group, Katholieke Universiteit Leuven, Celestijnenlaan 200D, Leuven B-3001, Belgium Tata Institute of Fundamental Research, 1 Homi Bhabha Road, Mumbai, India
منابع مشابه
The Effect of Aluminum, Gallium, Indium- Doping on the Zigzag (5, 0) Boron-Nitride Nanotubes: DFT, NMR, Vibrational, Thermodynamic Parameters and Electrostatic Potential Map with Electrophilicity Studies
Influence of Aluminum, Gallium, Indium- Doping on the Boron-Nitride Nanotubes (BNNTs) investigated with density functional theory (DFT) and Hartreefock (HF) methods. For this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (GIAO) approch. In the following, structural parameter values, electrostatic potential, thermodynamic parameters,...
متن کاملGaInN Quantum Wells as Optoelectronic Transducers for Biosensing of Ferritins
In this work, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in biosensing are presented. In contrast to the conventional electrical read-out of III-nitride-based sensors, a purely optical photoluminescence read-out is performed. Particularly, optical investigations of the iron-storage molecule ferritin deposited on GaInN quantum wells are p...
متن کاملRed shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride
The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0 10 6 Torr of nitrogen trifluoride (NF3) has been studied by photoluminescence spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy, and hydrogen adsorption infrared spectroscopy. A red shift of 25 nm in the peak was observed following heating in NF3 at 530 1C. The compressive strain of th...
متن کاملPhosphor-Free InGaN White Light Emitting Diodes Using Flip-Chip Technology
Monolithic phosphor-free two-color gallium nitride (GaN)-based white light emitting diodes (LED) have the potential to replace current phosphor-based GaN white LEDs due to their low cost and long life cycle. Unfortunately, the growth of high indium content indium gallium nitride (InGaN)/GaN quantum dot and reported LED's color rendering index (CRI) are still problematic. Here, we use flip-chip ...
متن کاملInvestigation of phononic, dynamic and thermal properties of indium nitride in different phases
In this paper, the phonon, dynamic and thermal properties of indium nitride in two phases are investigated. The calculations are performed using the pseudopotantial method in the framework of density functional theory and by using the quantum-espresso Package. In the calculations, the exchange-correlation terms of LDA, GGA and PBE0 approximation are used. Investigation of phononic properties s...
متن کامل